型号:

IRFH5025TR2PBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 250V 3.8A PQFN
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRFH5025TR2PBF PDF
产品目录绘图 IR Hexfet PQFN
标准包装 400
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 250V
电流 - 连续漏极(Id) @ 25° C 3.8A
开态Rds(最大)@ Id, Vgs @ 25° C 100 毫欧 @ 5.7A,10V
Id 时的 Vgs(th)(最大) 5V @ 150µA
闸电荷(Qg) @ Vgs 56nC @ 10V
输入电容 (Ciss) @ Vds 2150pF @ 50V
功率 - 最大 3.6W
安装类型 表面贴装
封装/外壳 8-VQFN
供应商设备封装 8-QFN
包装 带卷 (TR)
其它名称 IRFH5025TR2PBFTR
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